V-NAND technology – a new standard of capacity and performance
V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference.
The synergy of both structural and material innovations leads to improved speed, power efficiency, and endurance.


Samsung has shifted the paradigm of material used for NAND when applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity.
This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND technology lets heavy-workload users and data centers store and handle more data with greatly improved capacity.
Samsung V-NAND enables up to 100 layers of cells to be stacked with the potential to scale the density up to 1 Terabit. The 2D planar NAND density ceiling can only reach the minimum density of V-NAND.

Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to cell-to-cell interference.
V-NAND does not need to go through a complex program algorithm to write data, and this enables the memory to write data up to two times faster than traditional 2D planar NAND flash memory.

Shedding light on a whole new standard of capacity and performance.
V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference.
The synergy of both structural and material innovations leads to improved speed, power efficiency, and endurance.
